GE Aerospace Unveils Next-Generation SiC MOSFETs for Enhanced Efficiency
NISKAYUNA, NY – November 12, 2025 – In a groundbreaking move, GE Aerospace has successfully demonstrated its latest line of Silicon carbide (SiC) power MOSFET chips. These fourth-generation devices unveiled at the GE Research Center in Niskayuna, NY, are designed to boost switching speed, efficiency, and durability.
Compactly designed with a 5mm X 5mm chip size, these SiC power devices offer 1200V and 11mΩ, and have an impressive temperature tolerance of up to 200°C. As industries increasingly turn towards advanced semiconductor technologies for hybrid and electric vehicle platforms, these innovations promise significant advancements in efficiency and power density, catering to the mounting demand for energy and power solutions.
“Our newest Gen-4 SiC MOSFETs deliver a step change in performance that makes them very attractive across a wide range of industries, including automotive, renewables, AI data centers, and industrial electrical power,” stated Kris Shepherd, president & GM, Electrical Power Systems for GE Aerospace. He emphasized the potential enhancements in efficiency, reliability, and power density these devices offer.
The Importance of SiC MOSFETs
With the increasing energy demands driven by AI data centers and the expansion of hybrid and electric power applications in sectors such as aerospace and automotive, GE Aerospace’s Gen-4 SiC MOSFETs provide a crucial solution. SiC has emerged as the preferred power semiconductor material, known for its high power density and superior switching speed. GE Aerospace’s latest devices not only feature industry-leading 200°C temperature ratings but also benefit from over two decades of dedicated R&D, a robust IP portfolio, and specialized application expertise in aerospace.
The enhanced power density, temperature resilience, and switching speed of GE Aerospace’s Gen-4 SiC MOSFETs promise significant improvements for current systems. This ranges from high-speed racing cars to AI data centers. In racing, electric machines with traction inverters convert kinetic energy during braking into electrochemical energy, providing a boost in acceleration. In AI data centers, high-voltage SiC MOSFETs streamline power architecture, reducing power losses and minimizing the power conversion footprint.
GE Aerospace’s Electrical Power business already provides SiC-enabled solutions for electric power generation, distribution, and conversion, supporting various platforms, including aerospace, marine, and ground-based applications. The company is also exploring new partnerships in the automotive and data center industries, particularly with the rise of AI.
About GE Aerospace
GE Aerospace stands as a leader in aerospace propulsion, services, and systems, supported by a vast installed base of commercial and military aircraft engines. With a workforce of around 53,000 employees, the company leverages over a century of innovation to redefine the future of flight. For more information on GE Aerospace’s initiatives and partnerships, visit www.geaerospace.com.
Original Story at www.geaerospace.com